H10B 53/50
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the boundary
Official title: characterised by the boundary region between the core and peripheral circuit regions
H10B53/50 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the boundary) appears on 52 US grants and 47 published applications in this corpus.
Search patents in H10B- Granted patents
- 52
- Published applications
- 47
- Assignees
- 23
- Inventors
- 97
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 2 | 2 |
| 2016 | 1 | 2 |
| 2017 | 1 | 0 |
| 2018 | 2 | 3 |
| 2019 | 1 | 4 |
| 2020 | 7 | 5 |
| 2021 | 3 | 3 |
| 2022 | 5 | 2 |
| 2023 | 2 | 4 |
| 2024 | 12 | 7 |
| 2025 | 11 | 6 |
| 2026 | 1 | 2 |
By publication year. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Semiconductor devices having dummy patterns and methods of fabricating the same21US 9,748,257 B2Samsung Electronics Co., Ltd. · 2017
- Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same13US 6,768,151 B2NEC Corporation · 2004
- Semiconductor device, manufacturing method thereof, and electronic apparatus10US 9,865,549 B2Sony Corporation · 2018
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