Back to results
US 9,865,549 B2Granted
Semiconductor device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorTakushi Shigetoshi
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.
Claims14
A semiconductor device comprising:
- a first semiconductor substrate including:
- a first plurality of wiring layers, each wiring layer of the first plurality of wiring layers including a wire, at least one low-dielectric rate interlayer insulating film layer, and a diffusion barrier film, wherein the first plurality of wiring layers is arranged such that at least one low-dielectric rate interlayer insulating film layer is between each of the wire and the diffusion barrier film and the diffusion barrier film is disposed on each wire of the first plurality of wiring layers;
- a guard ring including a wire from each of the first plurality of wiring layers and a plurality of vias arranged in a stacked structure and in contact with a through electrode, wherein each wire from each of the first plurality of wiring layers is electrically connected to a respective via of the plurality of vias, and at least one via of the plurality of vias includes metal material disposed between the diffusion barrier film and the through electrode;
- and
- a second semiconductor substrate including:
- a second plurality of wiring layers, each wiring layer of the second plurality of wiring layers including a wire, at least one interlayer insulating film layer, and a diffusion barrier film, wherein the second plurality of wiring layers is arranged such that at least one interlayer insulating film layer is between each of the wire and the diffusion barrier film and each wire of the second plurality of wiring layers is disposed on the diffusion barrier film;
- and
- a pad electrically connected to a wire of a wiring layer of the second plurality of wiring layers,
- wherein the through electrode is buried inside the guard ring and electrically connected to the pad.
6 more elements
An electronic apparatus comprising:
- a semiconductor device, the semiconductor device including:
- a first semiconductor substrate including:
- a first plurality of wiring layers, each wiring layer of the first plurality of wiring layers including a wire, at least one low-dielectric rate interlayer insulating film layer, and a diffusion barrier film, wherein the first plurality of wiring layers is arranged such that at least one low-dielectric rate interlayer insulating film layer is between each of the wire and the diffusion barrier film and the diffusion barrier film is disposed on each wire of the first plurality of wiring layers;
- a guard ring including a wire from each of the first plurality of wiring layers and a plurality of vias arranged in a stacked structure and in contact with a through electrode, wherein each wire from each of the first plurality of wiring layers is electrically connected to a respective via of the plurality of vias, and at least one via of the plurality of vias includes metal material disposed between the diffusion barrier film and the through electrode;
- and
- a second semiconductor substrate including:
- a second plurality of wiring layers, each wiring layer of the second plurality of wiring layers including a wire, at least one interlayer insulating film layer, and a diffusion barrier film, wherein the second plurality of wiring layers is arranged such that at least one interlayer insulating film layer is between each of the wire and the diffusion barrier film and each wire of the second plurality of wiring layers is disposed on the diffusion barrier film;
- and
- a pad electrically connected to a wire of a wiring layer of the second plurality of wiring layers,
- wherein the through electrode is buried inside the guard ring and electrically connected to the pad;
- and
- a lens configured to direct light to an imaging surface of the semiconductor device.
9 more elements
Dependencies are inferred from the claim text.