Managing slit structures in semiconductor devices

A semiconductor device, comprising:

• a first stack structure comprising interleaved first conductive layers and first dielectric layers;
• a second stack structure laterally surrounded by the first stack structure, the second stack structure comprising the first conductive layers interleaved with second dielectric layers;
• and
• a plurality of conductive structures extending into the second stack structure at different depths along a first direction, each of the plurality of conductive structures being connected to a respective one of the first conductive layers.

A method to form a semiconductor device, comprising:

• forming a first stack structure comprising interleaved first conductive layers and first dielectric layers;
• forming a capacitor structure extending through the first stack structure along a first direction and comprising an inner electrode layer, a ferroelectric layer and a plurality of outer electrodes, adjacent outer electrodes of the plurality of outer electrodes being arranged and isolated from each other along the first direction;
• forming a slit structure, wherein a portion of the slit structure extends partially into the first stack structure;
• and
• forming a second stack structure comprising the first conductive layers interleaved with second dielectric layers, the second stack structure adjacent to the first stack structure.