H10B 53/30
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the memory
Official title: characterised by the memory core region
H10B53/30 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the memory) appears on 2,055 US grants and 2,547 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,055
- Published applications
- 2,547
- Assignees
- 266
- Inventors
- 2,420
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 12 | 0 |
| 1999 | 15 | 0 |
| 2000 | 27 | 0 |
| 2001 | 59 | 30 |
| 2002 | 56 | 101 |
| 2003 | 87 | 117 |
| 2004 | 107 | 159 |
| 2005 | 102 | 135 |
| 2006 | 99 | 157 |
| 2007 | 82 | 118 |
| 2008 | 74 | 124 |
| 2009 | 72 | 68 |
| 2010 | 62 | 69 |
| 2011 | 64 | 30 |
| 2012 | 39 | 39 |
| 2013 | 41 | 31 |
| 2014 | 39 | 25 |
| 2015 | 23 | 35 |
| 2016 | 25 | 35 |
| 2017 | 41 | 37 |
| 2018 | 50 | 66 |
| 2019 | 52 | 64 |
| 2020 | 62 | 97 |
| 2021 | 78 | 126 |
| 2022 | 121 | 164 |
| 2023 | 157 | 223 |
| 2024 | 160 | 192 |
| 2025 | 127 | 178 |
| 2026 | 108 | 127 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory structure and method of forming the same6 Oct 2026US 12,757,406 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Ferroelectric memory architecture with gap region6 Oct 2026US 12,757,408 B2Micron Technology, Inc.
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Semiconductor device including two-dimensional material and method of manufacturing the same29 Sep 2026US 12,751,046 B2Samsung Electronics Co., Ltd.
- Metal oxide film, semiconductor device, and manufacturing method thereof8 Oct 2026US 2026/0313909 A1
- Ferroelectric memory device comprising a chimney seed structure8 Oct 2026US 2026/0313910 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric devices and methods of forming the same8 Oct 2026US 2026/0313911 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, memory device, and methods thereof8 Oct 2026US 2026/0313912 A1Ferroelectric Memory GmbH
- Memory device assembly with a leaker device1 Oct 2026US 2026/0304782 A1Micron Technology, Inc.
Most cited
By later US patents
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Integrated circuit and method252US 6,211,035 B1Texas Instruments Incorporated · 2001
- Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same215US 5,392,189 AMicron Semiconductor, Inc. · 1995
- Ultra low-cost solid-state memory198US 7,463,502 B2Hitachi Global Storage Technologies Netherlands B. V. · 2008
- Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same174US 5,381,302 AMicron Semiconductor, Inc. · 1995