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US 12,751,046 B2Granted
Semiconductor device including two-dimensional material and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDuseop Yoon, Junyoung Kwon, Minsu Seol, Minseok Yoo, Kyung-Eun Byun
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Abstract
A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer. The semiconductor device may be manufactured by a method including forming metal islands on a two-dimensional material layer using a redox method and forming a metal layer covering the metal islands on the two-dimensional material layer.
Claims16
A semiconductor device comprising:
- a two-dimensional material layer;
- a plurality of metal islands spaced apart from each other on the two-dimensional material layer;
- and
- a metal layer covering the plurality of metal islands on the two-dimensional material layer and being in contact with the two-dimensional material layer, wherein the plurality of metal islands and the metal layer include different metals from each other.
1 more element
A transistor comprising:
- a two-dimensional material layer as a channel layer;
- a plurality of metal islands spaced apart from each other on the two-dimensional material layer;
- a metal layer covering the plurality of metal islands on the two-dimensional material layer and being in contact with the two-dimensional material layer,
- wherein the plurality of metal islands and the metal layer include different metals from each other, and
- the plurality of metal islands and the metal layer are a source electrode or a drain electrode of the transistor.
2 more elements
Dependencies are inferred from the claim text.