H10B 63/00
Resistance change memory devices
Official title: Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10B63/00 (Resistance change memory devices) appears on 9,102 US grants and 10,744 published applications in this corpus.
Search patents in H10B- Granted patents
- 9,102
- Published applications
- 10,744
- Assignees
- 671
- Inventors
- 7,411
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 9 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 11 | 0 |
| 1999 | 14 | 0 |
| 2000 | 15 | 0 |
| 2001 | 15 | 3 |
| 2002 | 20 | 40 |
| 2003 | 48 | 91 |
| 2004 | 68 | 128 |
| 2005 | 83 | 152 |
| 2006 | 102 | 221 |
| 2007 | 98 | 253 |
| 2008 | 148 | 416 |
| 2009 | 174 | 405 |
| 2010 | 349 | 507 |
| 2011 | 424 | 503 |
| 2012 | 450 | 536 |
| 2013 | 575 | 556 |
| 2014 | 614 | 637 |
| 2015 | 630 | 524 |
| 2016 | 573 | 494 |
| 2017 | 503 | 454 |
| 2018 | 429 | 432 |
| 2019 | 486 | 549 |
| 2020 | 553 | 741 |
| 2021 | 582 | 656 |
| 2022 | 480 | 594 |
| 2023 | 446 | 580 |
| 2024 | 440 | 473 |
| 2025 | 459 | 446 |
| 2026 | 264 | 353 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type6,217
- H10B 63/30Comprising selection components having three or more electrodes4,002
- H10B 63/20Comprising selection components having two electrodes3,178
- H10B 63/10Phase change ram [pcram, pram] devices850
Recent patents
- Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells6 Oct 2026US 12,755,784 B2Samsung Electronics Co., Ltd.
- Non-volatile memory device having primary memory layer with oxygen gradient6 Oct 2026US 12,757,411 B2Nanyang Technological University
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Three-dimensional memory device and method for forming the same8 Oct 2026US 2026/0313898 A1Fujian Jinhua Integrated Circuit Co., Ltd.
- Memory cell formation using a double split pillar process flow8 Oct 2026US 2026/0313914 A1Micron Technology, Inc.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Semiconductor device with a cross-point structure8 Oct 2026US 2026/0313916 A1SK hynix Inc.
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Polysilicon pillar diode for use in a non-volatile memory cell601US 5,751,012 AMicron Technology, Inc. · 1998
- Programmable semiconductor structures and methods for using the same522US 4,646,266 AEnergy Conversion Devices, Inc. · 1987
- Method of fabricating nonvolatile memory device521US 8,030,129 B2Samsung Electronics Co., Ltd. · 2011