Non-volatile memory device having primary memory layer with oxygen gradient
AssigneeNanyang Technological University
InventorsYuanmin Du, Wen Siang Lew, Putu Andhita Dananjaya, Siew Wei Hoo, Weng Hong Lai
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Abstract
Provided is an electrically actuated resistive non-volatile memory. The resistive memory device comprises a first electrode, a second electrode, a buffer layer, and a primary memory layer. The primary memory layer comprises a first active layer, a second active layer, and a third active layer, wherein an oxygen gradient is configured across the primary memory layer. Methods of fabricating and operating such a memory device are also provided. The memory device advantageously provides for lower power consumption and more stable resistive switching.
Claims19
A non-volatile memory device, comprising:
- a buffer layer of a first metal oxide;
- and
- a primary memory layer having:
- a first active layer of a second metal oxide, the first active layer being immediately adjacent and connected to the buffer layer;
- a second active layer of a third metal oxide;
- and
- a third active layer of a fourth metal oxide, the second active layer being disposed between the first active layer and the third active layer, wherein the primary memory layer is characterized by an oxygen gradient, and wherein a highest oxygen concentration is associated with the first active layer, and wherein a lowest oxygen concentration is associated with the third active layer;
- wherein the third metal oxide further comprises a first dopant, the first dopant being a metal different from any metal element forming the second metal oxide;
- wherein the fourth metal oxide further comprises a second dopant, the second dopant being a metal different from any metal element forming the second metal oxide;
- and
- wherein the first dopant and the second dopant are selected such that the doped third metal oxide has a higher oxygen concentration than the doped fourth metal oxide.
A non-volatile memory device, comprising:
- a first electrode layer;
- a second electrode layer;
- a buffer layer disposed between the first electrode and the second electrode, the buffer layer formed of a first metal oxide;
- and
- a primary memory layer comprising three active layers disposed between the buffer layer and the second electrode, the first active layer is formed of a second metal oxide and physically connected to the buffer layer, the second active layer is formed of a third metal oxide, and the third active layer is formed of a fourth metal oxide and physically connected to the second electrode;
- wherein the first active layer having a high oxygen concentration, the second active layer having a lower oxygen concentration than the first active layer, and the third active layer having a lower oxygen concentration than the second active layer, an oxygen concentration decreasing in stages or gradually in a direction from the first active layer to the third active layer;
- wherein the third metal oxide further comprises a first dopant, the first dopant being a metal different from any metal element forming the second metal oxide;
- wherein the fourth metal oxide further comprises a second dopant, the second dopant being a metal different from any metal element forming the second metal oxide;
- and
- wherein the first dopant and the second dopant are selected such that the doped third metal oxide has a higher oxygen concentration than the doped fourth metal oxide.
Dependencies are inferred from the claim text.