H10B 63/20
Comprising selection components having two electrodes
Official title: {comprising selection components having two electrodes, e.g. diodes}
H10B63/20 (Comprising selection components having two electrodes) appears on 3,178 US grants and 3,741 published applications in this corpus.
Search patents in H10B- Granted patents
- 3,178
- Published applications
- 3,741
- Assignees
- 280
- Inventors
- 2,996
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 1 |
| 2002 | 12 | 19 |
| 2003 | 23 | 41 |
| 2004 | 32 | 44 |
| 2005 | 24 | 31 |
| 2006 | 33 | 70 |
| 2007 | 27 | 62 |
| 2008 | 44 | 128 |
| 2009 | 41 | 162 |
| 2010 | 116 | 235 |
| 2011 | 171 | 238 |
| 2012 | 198 | 239 |
| 2013 | 275 | 237 |
| 2014 | 278 | 245 |
| 2015 | 229 | 172 |
| 2016 | 184 | 160 |
| 2017 | 172 | 175 |
| 2018 | 142 | 157 |
| 2019 | 173 | 190 |
| 2020 | 203 | 240 |
| 2021 | 195 | 205 |
| 2022 | 140 | 180 |
| 2023 | 129 | 141 |
| 2024 | 111 | 125 |
| 2025 | 117 | 120 |
| 2026 | 70 | 124 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Non-volatile memory device having primary memory layer with oxygen gradient6 Oct 2026US 12,757,411 B2Nanyang Technological University
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Boron surface passivation of phase change memory material15 Sep 2026US 12,740,336 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,340 B2Samsung Electronics Co., Ltd.
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells8 Sep 2026US 12,732,193 B2iCometrue Company Ltd.
- Memory cell formation using a double split pillar process flow8 Oct 2026US 2026/0313914 A1Micron Technology, Inc.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Memory device1 Oct 2026US 2026/0304786 A1Kioxia Corporation
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Polysilicon pillar diode for use in a non-volatile memory cell601US 5,751,012 AMicron Technology, Inc. · 1998
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Programmable cell for use in programmable electronic arrays477US 4,499,557 AEnergy Conversion Devices, Inc. · 1985
- Electrically erasable memory elements characterized by reduced current and improved thermal stability456US 5,534,712 AEnergy Conversion Devices, Inc. · 1996