Boron surface passivation of phase change memory material

Abstract

Techniques for improving switching properties of phase change memory devices by boron surface passivation of the phase change memory material are provided. In one aspect, a phase change memory device includes: one or more phase change memory cells, each having a phase change material between a bottom electrode and a top electrode; and a boron-containing and nitrogen-containing bilayer on sidewalls of the phase change material to protect the phase change material from exposure to oxygen. An ovonic threshold switch can be implemented between the bottom electrode and the top electrode, in series with the phase change material. A method of fabricating the present phase change memory devices is also provided.

Dependencies are inferred from the claim text.