Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• row lines extending in a first direction;
• memory cells positioned on the row lines;
• barrier patterns positioned on the memory cells, respectively;
• and
• column lines extending in a second direction that crosses the first direction, and connecting the barrier patterns,
• wherein the memory cells are spaced apart from each other by a first interval in the first direction and spaced apart from each other by a second interval in the second direction, the second interval being shorter than the first interval.

A method of manufacturing a semiconductor device, the method comprising:

• forming a memory layer on a first conductive layer;
• forming memory lines that extend in a first direction and are spaced apart from each other by a second interval in a second direction by etching the memory layer, the second direction crossing the first direction;
• forming row lines that extend in the first direction by etching the first conductive layer;
• forming memory cells arranged in the first direction and the second direction and spaced apart from each other by a first interval in the first direction by etching the memory lines, the first interval being greater than the second interval;
• and
• forming column lines that extend in the second direction on the memory cells.