H10B 63/24
Of the ovonic threshold switching type
Official title: {of the Ovonic threshold switching type}
H10B63/24 (Of the ovonic threshold switching type) appears on 949 US grants and 1,194 published applications in this corpus.
Search patents in H10B- Granted patents
- 949
- Published applications
- 1,194
- Assignees
- 93
- Inventors
- 1,104
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 1 | 2 |
| 2005 | 1 | 3 |
| 2006 | 3 | 20 |
| 2007 | 2 | 12 |
| 2008 | 5 | 9 |
| 2009 | 7 | 8 |
| 2010 | 9 | 14 |
| 2011 | 11 | 8 |
| 2012 | 8 | 8 |
| 2013 | 15 | 22 |
| 2014 | 19 | 25 |
| 2015 | 20 | 31 |
| 2016 | 34 | 54 |
| 2017 | 64 | 79 |
| 2018 | 67 | 94 |
| 2019 | 96 | 107 |
| 2020 | 124 | 157 |
| 2021 | 126 | 128 |
| 2022 | 89 | 102 |
| 2023 | 77 | 88 |
| 2024 | 65 | 75 |
| 2025 | 70 | 73 |
| 2026 | 36 | 74 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Boron surface passivation of phase change memory material15 Sep 2026US 12,740,336 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,340 B2Samsung Electronics Co., Ltd.
- Scaled one transistor two resistor (1T 2R) memory8 Sep 2026US 12,733,178 B2International Business Machines Corporation
- Hydrogen and hydrocarbon plasma treatment of phase change memory material8 Sep 2026US 12,733,410 B2International Business Machines Corporation
- Memory cell formation using a double split pillar process flow8 Oct 2026US 2026/0313914 A1Micron Technology, Inc.
- Memory device1 Oct 2026US 2026/0304786 A1Kioxia Corporation
- Target for film deposition and method for producing functional layer24 Sep 2026US 2026/0286505 A1Nippon Electric Glass Co., Ltd.
- Semiconductor device and method of forming the same24 Sep 2026US 2026/0293157 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cross-point memory array with access lines24 Sep 2026US 2026/0293158 A1Micron Technology, Inc.
Most cited
By later US patents
- Memory having access devices using phase change material such as chalcogenide132US 6,795,338 B2Intel Corporation · 2004
- Phase change memory with damascene memory element84US 7,534,625 B22009
- Three dimensional memory array architecture66US 8,729,523 B2Micron Technology, Inc. · 2014
- Three dimensional memory array architecture62US 8,841,649 B2Micron Technology, Inc. · 2014
- Method of forming phase change memory devices in a pulsed DC deposition chamber61US 7,888,240 B2STMicroelectronics S,r.l. · 2011