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US 6,795,338 B2Granted
Memory having access devices using phase change material such as chalcogenide
AssigneeIntel Corporation
InventorsWard D. Parkinson, Tyler A. Lowrey
Life of this patent
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Abstract
Briefly, in accordance with an embodiment of the invention, a memory is provided. The memory may include a memory element and a first access device coupled to the memory element, wherein the first access device comprises a first chalcogenide material. The memory may further include a second access device coupled to the first access device, wherein the second access device comprises a second chalcogenide material.
Claims23
An apparatus, comprising:
- a memory element;
- a first access device coupled in series to the memory element, wherein the first access device comprises a first chalcogenide material;
- and
- a second access device coupled in series to the first access device, wherein the second access device comprises a second chalcogenide material.
1 more element
A system, comprising:
- a processor;
- and
- a memory coupled to the processor, the memory including;
- a memory element;
- a first access device coupled in series to the memory element, wherein the first access device comprises a first chalcogenide material;
- and
- a second access device coupled in series to the first access device, wherein the second access device comprises a second chalcogenide material.
4 more elements
Dependencies are inferred from the claim text.