Target for film deposition and method for producing functional layer

A target for film deposition made of a bulk chalcogenide glass that contains, in terms of atomic %, 0.1% to 50% Ge, 40% to 90% Te, and 1% to 59% Si+Al+Ga+Sn+Bi+Cu+Ag+Zn+Y+In+Ca+Mg and is substantially free of Sb.

A target for film deposition containing, in terms of atomic %, 0.1% to 50% Ge, 40% to 90% Te, and 1% to 59% Si+Al+Ga+Sn+Bi+Cu+Ag+Zn+Y+In+Ca+Mg, being substantially free of Sb, and containing a crystal portion.

A method for producing a functional layer using a target for film deposition,

• the target for film deposition being made of a bulk chalcogenide glass containing, in terms of atomic %, 0.1% to 50% Ge, 40% to 90% Te, and 1% to 59% Si+Al+Ga+Sn+Bi+Cu+Ag+Zn+Y+In+Ca+Mg and substantially free of Sb,
• the method comprising producing a functional layer containing, in terms of atomic %, 0.1% to 50% Ge, 40% to 90% Te, and 1% to 59% Si+Al+Ga+Sn+Bi+Cu+Ag+Zn+Y+In+Ca+Mg and substantially free of Sb.

A method for producing a functional layer using a plurality of targets for film deposition, wherein

• the targets for film deposition include a target for film deposition made of a Ga alloy or a Ga compound, and
• the functional layer is a variable-resistance layer or a phase-change layer each of which contains, in terms of atomic %, 0.1% to 50% Ge, 0.1% to 50% Ga, and 40% to 90% Te.