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US 7,888,240 B2Granted
Method of forming phase change memory devices in a pulsed DC deposition chamber
AssigneeSTMicroelectronics S.r.l.
InventorsRoger Hamamjy, Kuo-Wei Chang, Sean Jong Lee, Chong W. Lim
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Abstract
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
Claims19
A method, comprising:
- providing a deposition chamber;
- moving a substrate into the deposition chamber;
- forming a chalcogenide layer directly or indirectly on the substrate in the deposition chamber;
- and
- depositing a carbon film directly or indirectly on the substrate using a 350 kHz direct current pulser.
2 more elements
A method, comprising:
- providing a deposition chamber;
- moving a substrate into the deposition chamber;
- forming a chalcogenide layer directly or indirectly on the substrate in the deposition chamber using a pulsed direct current device;
- operating the pulsed direct current device at a first frequency to form at least a portion of the chalcogenide layer;
- and
- operating the pulsed direct current device at a second frequency that is greater than the first frequency to deposit a carbon layer, wherein the second frequency is about 350 kHz.
3 more elements
A method, comprising:
- providing a pulsed direct current deposition chamber;
- forming at least a portion of a phase change memory element including a chalcogenide film using the pulsed direct current deposition chamber;
- and
- depositing a carbon film of the phase change memory element in the pulsed direct current deposition chamber using a 350 kHz direct current pulser.
1 more element
A method of forming a memory device, comprising:
- providing a cluster tool having a plurality of reaction chambers;
- forming a portion of a phase change memory device in one of the reaction chambers using a direct current pulser, the portion of the phase change memory device comprising chalcogenide;
- depositing a carbon layer of the phase change memory device in one of the reaction chambers using a 350 kHz direct current conductive pulser.
Dependencies are inferred from the claim text.