Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSam Vaziri, Isha Datye, Xinyu BAO
Life of this patent
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Abstract
A semiconductor device includes a selector. The selector includes a selector layer. The selector layer includes a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element selected from a group consisting of tellurium (Te), selenium (Se) and antimony (Sb). A thickness of the selector layer is in a range of 2 nm to 25 nm.
Claims20
A semiconductor device, comprising:
- a selector, comprising a selector layer, wherein the selector layer comprises a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element selected from a group consisting of tellurium (Te), selenium (Se) and antimony (Sb), wherein a thickness of the selector layer is in a range of 2 nm to 25 nm.
A semiconductor device, comprising:
- a selector, comprising a selector layer, wherein the selector layer comprises a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element being selenium (Se).
A method of forming a semiconductor device, comprising:
- forming a first electrode layer;
- forming a selector layer over the first electrode layer by a pulsed laser deposition (PLD), wherein the selector layer comprises a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element selected from a group consisting of tellurium (Te), selenium (Se) and antimony (Sb);
- and
- forming a second electrode layer over the selector layer.
Dependencies are inferred from the claim text.