H10B 63/22
Of the metal-insulator-metal type
Official title: {of the metal-insulator-metal type}
H10B63/22 (Of the metal-insulator-metal type) appears on 362 US grants and 423 published applications in this corpus.
Search patents in H10B- Granted patents
- 362
- Published applications
- 423
- Assignees
- 89
- Inventors
- 567
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 4 |
| 2004 | 3 | 8 |
| 2005 | 5 | 0 |
| 2006 | 3 | 2 |
| 2007 | 2 | 1 |
| 2008 | 3 | 5 |
| 2009 | 1 | 13 |
| 2010 | 5 | 30 |
| 2011 | 18 | 28 |
| 2012 | 21 | 20 |
| 2013 | 29 | 30 |
| 2014 | 22 | 31 |
| 2015 | 35 | 27 |
| 2016 | 30 | 26 |
| 2017 | 37 | 40 |
| 2018 | 31 | 21 |
| 2019 | 17 | 23 |
| 2020 | 20 | 24 |
| 2021 | 23 | 20 |
| 2022 | 11 | 13 |
| 2023 | 14 | 15 |
| 2024 | 9 | 14 |
| 2025 | 16 | 12 |
| 2026 | 5 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Cross-point memory array with access lines16 Jun 2026US 12,660,207 B2Micron Technology, Inc.
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells9 Jun 2026US 12,652,052 B2
- RRAM structure and method of fabricating the same26 May 2026US 12,641,797 B2United Microelectronics Corp.
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells19 May 2026US 12,633,926 B2iCometrue Company Ltd.
- Memory cell with a variable element and a phase change memory17 Feb 2026US 12,557,564 B2International Business Machines Corporation
- Cross-point memory array with access lines24 Sep 2026US 2026/0293158 A1Micron Technology, Inc.
- Storage device17 Sep 2026US 2026/0282390 A1Kioxia Corporation
- Synaptic device and synaptic device array17 Sep 2026US 2026/0282767 A1Hong Kong Metropolitan University
- Semiconductor device and method for fabricating the same6 Aug 2026US 2026/0231435 A1SK hynix Inc.
- Method for manufacturing an array including at least two memory cells and array therefor25 Jun 2026US 2026/0182272 A1
Most cited
By later US patents
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Self-aligned small contact phase-change memory method and device206US 7,220,983 B2Macronix International Co., Ltd. · 2007
- Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects184US 9,570,683 B1Crossbar, Inc. · 2017
- Methods of fabricating a cross point memory array141US 8,021,897 B2Micron Technology, Inc. · 2011
- Manufacturing electronic devices comprising TFTs and MIMs115US 5,466,617 AU. S. Philips Corporation · 1995