Storage device

A storage device comprising:

• a plurality of memory cells each including a first electrode, a second electrode, a third electrode, a switching layer, and a resistive layer, wherein
• the second electrode is between the first and third electrodes,
• the switching layer is between the first and second electrodes,
• the resistive layer is between the second and third electrodes,
• the switching layer includes:
• an oxide, a nitride, or an oxynitride of at least one first element selected from a group consisting of aluminum, silicon, germanium, zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium,
• at least one second element that is different from the first element and is selected from a group consisting of aluminum, zinc, tin, gallium, bismuth, and indium, and
• at least one third element selected from a group consisting of tellurium, sulfur, selenium, and antimony,
• at least one of the first and second electrodes includes a carbon layer, and
• the carbon layer includes a first region that contacts the switching layer and includes at least one fourth element selected from a group consisting of silicon, aluminum, phosphorus, gallium, and germanium.