RRAM structure and method of fabricating the same

Abstract

An RRAM structure includes a bottom electrode, a resistive switching layer, a top electrode, a spacer and a conductive line. The bottom electrode is a first cylinder. The resistive switching layer includes a second cylinder and a three-dimensional disk. A first bottom of the second cylinder directly contacts a top surface of the three-dimensional disk. The top electrode is a third cylinder. The third cylinder includes a top base, a second bottom base and a sidewall. The first cylinder is embedded within the second cylinder and the three-dimensional disk. The second cylinder is embedded within the third cylinder and the second bottom base of the third cylinder directly contacts the top surface of the three-dimensional disk. The spacer surrounds and directly contacts a side surface of the three-dimensional disk. The conductive line encapsulates the top base and the sidewall of the third cylinder.

Dependencies are inferred from the claim text.