Unity Semiconductor Corporation
San Jose, CA, US· latest recorded location
Unity Semiconductor Corporation is named on 133 US grants and 283 published applications in this corpus. Its most frequent classification is G11C (Static stores).
- Granted patents
- 133
- Published applications
- 283
- Inventors
- 39
- Granted in 2026 so far
- 0
- Most recent grant
- 19 Dec 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 4 | 10 |
| 2005 | 2 | 7 |
| 2006 | 1 | 6 |
| 2007 | 0 | 1 |
| 2008 | 0 | 6 |
| 2009 | 2 | 44 |
| 2010 | 1 | 38 |
| 2011 | 2 | 42 |
| 2012 | 20 | 41 |
| 2013 | 21 | 15 |
| 2014 | 11 | 12 |
| 2015 | 12 | 12 |
| 2016 | 11 | 7 |
| 2017 | 14 | 9 |
| 2018 | 7 | 13 |
| 2019 | 6 | 7 |
| 2020 | 10 | 9 |
| 2021 | 6 | 3 |
| 2022 | 2 | 1 |
| 2023 | 1 | 0 |
By publication year.
Technology areas
Share of 416 documents
- G11CStatic stores339
- H10BElectronic memory devices151
- H10NElectric solid-state devices not otherwise provided for147
- G06FComputing and data processing75
- H03KPulse technique31
- Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information28
- H10DInorganic electric semiconductor devices21
- B82YSpecific uses or applications of nanostructures20
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by8
- Y10TTechnical subjects covered by former us classification7
Recent patents
- Vertical cross-point arrays for ultra-high-density memory applications19 Dec 2023US 11,849,593 B2
- Local bit lines and methods of selecting the same to access memory elements in cross-point arrays26 Jul 2022US 11,398,256 B2
- Vertical cross-point arrays for ultra-high-density memory applications21 Jun 2022US 11,367,751 B2
- Array voltage regulating technique to enable data operations on large memory arrays with resistive memory elements12 Oct 2021US 11,144,218 B2
- Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations10 Aug 2021US 11,087,841 B2
- Vertical cross-point arrays for ultra-high-density memory applications8 Dec 2022US 2022/0392956 A1
- Conductive metal oxide structures in non-volatile re-writable memory devices1 Apr 2021US 2021/0098063 A1
- Array voltage regulating technique to enable data operations on large memory arrays with resistive memory elements25 Mar 2021US 2021/0089221 A1
- Vertical cross-point arrays for ultra-high-density memory applications18 Mar 2021US 2021/0083005 A1
- High voltage switching circuitry for a cross-point array19 Nov 2020US 2020/0365205 A1
Most cited
By later US patents
- Cross point memory array using multiple thin films260US 6,753,561 B12004
- Cross point memory array using multiple modes of operation117US 6,834,008 B22004
- Line drivers that fit within a specified line pitch115US 6,836,421 B22004
- Non-volatile memory with a single transistor and resistive memory element96US 6,856,536 B22005
- Multiplexor having a reference voltage on unselected lines74US 6,850,455 B22005