H10B 63/30
Comprising selection components having three or more electrodes
Official title: {comprising selection components having three or more electrodes, e.g. transistors}
H10B63/30 (Comprising selection components having three or more electrodes) appears on 4,002 US grants and 4,733 published applications in this corpus.
Search patents in H10B- Granted patents
- 4,002
- Published applications
- 4,733
- Assignees
- 378
- Inventors
- 3,903
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 3 |
| 2003 | 5 | 22 |
| 2004 | 11 | 54 |
| 2005 | 29 | 68 |
| 2006 | 49 | 112 |
| 2007 | 40 | 145 |
| 2008 | 80 | 224 |
| 2009 | 97 | 166 |
| 2010 | 169 | 190 |
| 2011 | 191 | 154 |
| 2012 | 164 | 207 |
| 2013 | 178 | 198 |
| 2014 | 222 | 243 |
| 2015 | 270 | 250 |
| 2016 | 296 | 251 |
| 2017 | 235 | 193 |
| 2018 | 215 | 208 |
| 2019 | 256 | 255 |
| 2020 | 221 | 320 |
| 2021 | 255 | 303 |
| 2022 | 201 | 267 |
| 2023 | 217 | 281 |
| 2024 | 241 | 241 |
| 2025 | 225 | 215 |
| 2026 | 128 | 163 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells6 Oct 2026US 12,755,784 B2Samsung Electronics Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Wordline-coupled differential programming of two-terminal memory with increased cell density and consistent cell pitch29 Sep 2026US 12,749,531 B1Crossbar, Inc.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
Most cited
By later US patents
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Programmable cell for use in programmable electronic arrays477US 4,499,557 AEnergy Conversion Devices, Inc. · 1985
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Programmable cell for use in programmable electronic arrays343US 4,599,705 AEnergy Conversion Devices, Inc. · 1986