Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys

Abstract

The present disclosure provides resistive random-access memory (RRAM) devices and methods for making the same. An RRAM device may include a first electrode, a second electrode comprising a ruthenium alloy, and a switching oxide layer fabricated between the first electrode and the second electrode. The first electrode may include palladium, tungsten, nickel, titanium nitride, tantalum nitride, etc. The switching oxide layer may include at least one transition metal oxide. The ruthenium alloy may include a binary ruthenium alloy, such as a platinum-ruthenium alloy, an iridium-ruthenium alloy, an osmium-ruthenium alloy, a rhodium-ruthenium alloy, a molybdenum-ruthenium alloy, a chromium-ruthenium alloy, an iron-ruthenium alloy, or a tantalum-ruthenium alloy. In some embodiments, the RRAM device may further have an interface layer positioned between the switching oxide layer and the second electrode and/or an interface layer positioned between the first electrode and the switching oxide layer.

Dependencies are inferred from the claim text.