H10B 41/00
Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates
Official title: Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
H10B41/00 (Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates) appears on 16,867 US grants and 18,887 published applications in this corpus.
Search patents in H10B- Granted patents
- 16,867
- Published applications
- 18,887
- Assignees
- 924
- Inventors
- 13,117
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 7 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 17 | 0 |
| 1988 | 14 | 0 |
| 1989 | 27 | 0 |
| 1990 | 16 | 0 |
| 1991 | 42 | 0 |
| 1992 | 43 | 0 |
| 1993 | 50 | 0 |
| 1994 | 65 | 0 |
| 1995 | 95 | 0 |
| 1996 | 107 | 0 |
| 1997 | 144 | 0 |
| 1998 | 153 | 0 |
| 1999 | 204 | 0 |
| 2000 | 273 | 0 |
| 2001 | 331 | 129 |
| 2002 | 324 | 331 |
| 2003 | 333 | 332 |
| 2004 | 393 | 460 |
| 2005 | 343 | 589 |
| 2006 | 410 | 706 |
| 2007 | 413 | 739 |
| 2008 | 441 | 778 |
| 2009 | 475 | 638 |
| 2010 | 630 | 543 |
| 2011 | 566 | 600 |
| 2012 | 503 | 588 |
| 2013 | 574 | 540 |
| 2014 | 594 | 615 |
| 2015 | 670 | 763 |
| 2016 | 772 | 707 |
| 2017 | 700 | 608 |
| 2018 | 547 | 544 |
| 2019 | 642 | 742 |
| 2020 | 814 | 1067 |
| 2021 | 868 | 1229 |
| 2022 | 858 | 1396 |
| 2023 | 888 | 1203 |
| 2024 | 998 | 1195 |
| 2025 | 884 | 998 |
| 2026 | 605 | 847 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 41/30Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the memory9,360
- H10B 41/20Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by three-dimensional [3d]6,871
- H10B 41/40Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the peripheral4,825
- H10B 41/10Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the top-view3,213
- H10B 41/50Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the boundary1,255
- H10B 41/70The floating gate being an electrode shared by two or more components643
- H10B 41/60The control gate being a doped region616
Recent patents
- Address fault detection in a memory system6 Oct 2026US 12,755,788 B2Silicon Storage Technology, Inc.
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Nonvolatile memory with self-tracking IREF6 Oct 2026US 12,755,799 B2Texas Instruments Incorporated
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Floating data line circuit and method8 Oct 2026US 2026/0311771 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
Most cited
By later US patents
- High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates827US 5,867,429 ASanDisk Corporation · 1999
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Method of making dense flash EEprom semiconductor memory structures594US 5,070,032 ASunDisk Corporation · 1991