H10B 41/40
Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the peripheral
Official title: characterised by the peripheral circuit region
H10B41/40 (Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the peripheral) appears on 4,825 US grants and 5,281 published applications in this corpus.
Search patents in H10B- Granted patents
- 4,825
- Published applications
- 5,281
- Assignees
- 402
- Inventors
- 5,413
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 9 | 0 |
| 1988 | 7 | 0 |
| 1989 | 15 | 0 |
| 1990 | 5 | 0 |
| 1991 | 10 | 0 |
| 1992 | 10 | 0 |
| 1993 | 15 | 0 |
| 1994 | 18 | 0 |
| 1995 | 19 | 0 |
| 1996 | 26 | 0 |
| 1997 | 41 | 0 |
| 1998 | 40 | 0 |
| 1999 | 54 | 0 |
| 2000 | 70 | 0 |
| 2001 | 92 | 38 |
| 2002 | 112 | 127 |
| 2003 | 103 | 95 |
| 2004 | 109 | 139 |
| 2005 | 96 | 170 |
| 2006 | 133 | 202 |
| 2007 | 126 | 200 |
| 2008 | 125 | 198 |
| 2009 | 128 | 157 |
| 2010 | 165 | 150 |
| 2011 | 152 | 162 |
| 2012 | 161 | 155 |
| 2013 | 144 | 123 |
| 2014 | 153 | 146 |
| 2015 | 160 | 188 |
| 2016 | 198 | 183 |
| 2017 | 184 | 163 |
| 2018 | 165 | 167 |
| 2019 | 174 | 222 |
| 2020 | 257 | 313 |
| 2021 | 251 | 387 |
| 2022 | 280 | 421 |
| 2023 | 266 | 353 |
| 2024 | 304 | 331 |
| 2025 | 271 | 289 |
| 2026 | 166 | 202 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,395 B2Nanya Technology Corporation
- Staircase structures for accessing three-dimensional memory arrays6 Oct 2026US 12,757,703 B2Micron Technology, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device29 Sep 2026US 12,749,544 B2Kioxia Corporation
- Integrated circuit device and electronic system including the same29 Sep 2026US 12,751,006 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Semiconductor device with through electrode through mold structure8 Oct 2026US 2026/0313894 A1Samsung Electronics Co., Ltd.
- Memory devices having transistor gate stacks with multiple metal regions8 Oct 2026US 2026/0313903 A1Micron Technology, Inc.
Most cited
By later US patents
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- TFT mask ROM and method for making same312US 6,841,813 B2Matrix Semiconductor, Inc. · 2005
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997