Semiconductor device and electronic system including the same

A semiconductor device comprising:

• a first semiconductor structure including a first substrate, circuit devices disposed on the first substrate, a lower wiring structure electrically connected to the circuit devices, and a lower bonding structure connected to the lower wiring structure;
• and
• a second semiconductor structure including:
• a second substrate disposed on the first semiconductor structure,
• gate electrodes stacked and spaced apart from each other in a vertical direction perpendicular to a lower surface of the second substrate,
• channel structures that penetrate the gate electrodes, that extend in the vertical direction, and that each include a channel layer,
• an upper wiring structure disposed below the gate electrodes and below the channel structures,
• an upper bonding structure connected to the upper wiring structure and bonded to the lower bonding structure,
• a plate conductive layer disposed on an upper surface of the second substrate, that is electrically connected to the channel layer, and that includes a metal material, and
• an isolation structure that extends in the vertical direction, that penetrates an entirety of the gate electrodes, and that has a width in a horizontal direction perpendicular to the vertical direction,
• wherein the isolation structure includes a vertical conductive layer that extends from the plate conductive layer, that is integrated with the plate conductive layer, and that includes a same metal material as the metal material of the plate conductive layer.