H10B 41/42
Simultaneous manufacture of periphery and memory cells
H10B41/42 (Simultaneous manufacture of periphery and memory cells) appears on 2,440 US grants and 2,237 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,440
- Published applications
- 2,237
- Assignees
- 293
- Inventors
- 2,942
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 8 | 0 |
| 1988 | 5 | 0 |
| 1989 | 14 | 0 |
| 1990 | 5 | 0 |
| 1991 | 10 | 0 |
| 1992 | 10 | 0 |
| 1993 | 15 | 0 |
| 1994 | 13 | 0 |
| 1995 | 15 | 0 |
| 1996 | 22 | 0 |
| 1997 | 40 | 0 |
| 1998 | 38 | 0 |
| 1999 | 50 | 0 |
| 2000 | 66 | 0 |
| 2001 | 83 | 36 |
| 2002 | 105 | 111 |
| 2003 | 94 | 81 |
| 2004 | 96 | 121 |
| 2005 | 77 | 136 |
| 2006 | 108 | 163 |
| 2007 | 98 | 146 |
| 2008 | 98 | 133 |
| 2009 | 91 | 97 |
| 2010 | 111 | 80 |
| 2011 | 97 | 84 |
| 2012 | 88 | 76 |
| 2013 | 70 | 62 |
| 2014 | 79 | 77 |
| 2015 | 89 | 104 |
| 2016 | 110 | 82 |
| 2017 | 80 | 72 |
| 2018 | 70 | 74 |
| 2019 | 65 | 63 |
| 2020 | 78 | 86 |
| 2021 | 61 | 101 |
| 2022 | 83 | 70 |
| 2023 | 71 | 61 |
| 2024 | 53 | 55 |
| 2025 | 42 | 47 |
| 2026 | 22 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,395 B2Nanya Technology Corporation
- Integrated circuit including flash memory and CMOS logic circuitry25 Aug 2026US 12,718,882 B2Texas Instruments Incorporated
- Voltage level shifter25 Aug 2026US 12,720,738 B2eMemory Technology Inc.
- Semiconductor device including bit line pad, method for manufacturing the same and electronic system including the same25 Aug 2026US 12,720,742 B2Samsung Electronics Co., Ltd.
- Photo mask and lithography method using the same25 Aug 2026US 12,721,115 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Lithography method using photo mask8 Oct 2026US 2026/0314343 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic devices including a source implant region and electronic devices including implant structures27 Aug 2026US 2026/0255602 A1Micron Technology, Inc.
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Lateral etch stops for access line formation in a memory die6 Aug 2026US 2026/0231422 A1Micron Technology, Inc.
- Semiconductor memory device and method for forming the same2 Jul 2026US 2026/0190337 A1Winbond Electronics Corp.
Most cited
By later US patents
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997
- Flash memory device using semiconductor fin and method thereof251US 7,285,820 B2Samsung Electronics Co., Ltd. · 2007
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010