US 2026/0190337 A1 · SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Abstract

A semiconductor memory device is provided and includes a substrate and stacked structures disposed on a memory cell region of the substrate. Each stacked structure includes a gate stack, a capping layer stack, first and second spacers, and a first protection layer. The capping layer stack is disposed on the gate stack. The first gate spacer includes a vertical portion covering sidewalls of the gate stack and the capping layer stack and a horizontal portion extending laterally from the bottom of the vertical portion. The second spacer covers the sidewall of the vertical portion. The first protection layer covers the upper surface of the capping layer stack and a sidewall of the horizontal portion.

Claims20

Dependent claims

A semiconductor memory device, comprising:

a substrate having a memory cell region;
and
a plurality of stacked structures disposed on the memory cell region of the substrate, wherein each of the stacked structures comprises:
a gate stack;
a capping layer stack disposed on the gate stack;
a first spacer having a vertical portion covering a sidewall of the gate stack and a sidewall of the capping layer stack and a horizontal portion extending laterally from a bottom of the vertical portion;
a second spacer covering a sidewall of the vertical portion;
and
a first protection layer extending upward from a top of the second spacer to cover an upper surface of the capping layer stack, and extending downward along a sidewall of the second spacer to cover a sidewall of the horizontal portion.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device and method for forming the same

Life of this patent

Semiconductor memory device and method for forming the same

Life of this patent

Abstract

Claims20