Flash memory device using semiconductor fin and method thereof

A flash memory device comprising:

• a semiconductor fin including a top surface and a side surface originated from different crystal planes;
• a first thermal oxide layer and a second thermal oxide layer with different thicknesses formed on the side surface and the top surface;
• a floating gate electrode formed on the first thermal oxide layer and the second thermal oxide layer;
• a gate insulating layer formed on the floating gate electrode;
• and
• a control gate electrode formed on the gate insulating layer.

A semiconductor device comprising:

• a first semiconductor fin including a top surface and a side surface of a different crystal plane;
• a second semiconductor fin including a top surface having the same crystal plane as the top surface of the first semiconductor fin and a side surface having the same or different crystal plane as the side surface of the first semiconductor fin;
• a first thermal oxide layer and a second thermal oxide layer formed on the top surface and the side surface of the first semiconductor fin, respectively;
• a floating gate electrode formed on the first thermal oxide layer and the second thermal oxide layer;
• a first gate insulating layer and a control gate electrode, which are sequentially formed on the floating gate electrode;
• a second gate insulating layer formed on the top surface and the side surface of the second semiconductor fin;
• and
• a gate electrode formed on the second gate insulating layer.