H10B 41/43
Comprising only one type of peripheral transistor
Official title: comprising only one type of peripheral transistor
H10B41/43 (Comprising only one type of peripheral transistor) appears on 1,030 US grants and 927 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,030
- Published applications
- 927
- Assignees
- 181
- Inventors
- 1,572
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 5 | 0 |
| 1988 | 4 | 0 |
| 1989 | 10 | 0 |
| 1990 | 4 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 4 | 0 |
| 1995 | 9 | 0 |
| 1996 | 7 | 0 |
| 1997 | 19 | 0 |
| 1998 | 18 | 0 |
| 1999 | 22 | 0 |
| 2000 | 28 | 0 |
| 2001 | 40 | 13 |
| 2002 | 36 | 44 |
| 2003 | 42 | 41 |
| 2004 | 38 | 55 |
| 2005 | 42 | 51 |
| 2006 | 38 | 67 |
| 2007 | 40 | 68 |
| 2008 | 52 | 52 |
| 2009 | 37 | 37 |
| 2010 | 41 | 25 |
| 2011 | 29 | 22 |
| 2012 | 30 | 25 |
| 2013 | 23 | 27 |
| 2014 | 23 | 21 |
| 2015 | 33 | 46 |
| 2016 | 51 | 43 |
| 2017 | 39 | 32 |
| 2018 | 31 | 38 |
| 2019 | 27 | 29 |
| 2020 | 44 | 31 |
| 2021 | 22 | 55 |
| 2022 | 42 | 27 |
| 2023 | 30 | 26 |
| 2024 | 22 | 22 |
| 2025 | 21 | 23 |
| 2026 | 7 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 41/48With a tunnel dielectric layer also being used as part of the367
- H10B 41/44With a control gate layer also being used as part of the277
- H10B 41/47With a floating-gate layer also being used as part of the peripheral173
- H10B 41/46With an inter-gate dielectric layer also being used as part of the149
Recent patents
- Photo mask and lithography method using the same25 Aug 2026US 12,721,115 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory system with a plurality of select string lines16 Jun 2026US 12,660,177 B2Kioxia Corporation
- Memory device formed on silicon-on-insulator substrate, and method of making same26 May 2026US 12,641,783 B2Silicon Storage Technology, Inc.
- Field effect transistor with top-protected gate electrode and methods for forming the same26 May 2026US 12,641,785 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic devices including an implant structure, for protection against corrosion, and related systems and methods21 Apr 2026US 12,610,546 B2Micron Technology, Inc.
- Lithography method using photo mask8 Oct 2026US 2026/0314343 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic devices including a source implant region and electronic devices including implant structures27 Aug 2026US 2026/0255602 A1Micron Technology, Inc.
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device25 Jun 2026US 2026/0181886 A1Renesas Electronics Corporation
- Manufacturing method for memory device, memory device, and memory cell18 Jun 2026US 2026/0173368 A1Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
Most cited
By later US patents
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997
- Flash memory device using semiconductor fin and method thereof251US 7,285,820 B2Samsung Electronics Co., Ltd. · 2007
- Process for making integrated circuits having titanium nitride triple interconnect196US 4,804,636 ATexas Instruments Incorporated · 1989
- Process for patterning local interconnects183US 4,657,628 ATexas Instruments Incorporated · 1987