H10B 41/47
With a floating-gate layer also being used as part of the peripheral
Official title: with a floating-gate layer also being used as part of the peripheral transistor
H10B41/47 (With a floating-gate layer also being used as part of the peripheral) appears on 173 US grants and 163 published applications in this corpus.
Search patents in H10B- Granted patents
- 173
- Published applications
- 163
- Assignees
- 61
- Inventors
- 318
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 5 | 0 |
| 2001 | 6 | 1 |
| 2002 | 2 | 6 |
| 2003 | 6 | 4 |
| 2004 | 3 | 9 |
| 2005 | 2 | 5 |
| 2006 | 5 | 7 |
| 2007 | 2 | 10 |
| 2008 | 8 | 6 |
| 2009 | 8 | 7 |
| 2010 | 8 | 4 |
| 2011 | 5 | 2 |
| 2012 | 3 | 5 |
| 2013 | 2 | 1 |
| 2014 | 3 | 6 |
| 2015 | 7 | 10 |
| 2016 | 12 | 15 |
| 2017 | 10 | 11 |
| 2018 | 10 | 13 |
| 2019 | 11 | 7 |
| 2020 | 13 | 8 |
| 2021 | 5 | 8 |
| 2022 | 6 | 3 |
| 2023 | 6 | 3 |
| 2024 | 2 | 5 |
| 2025 | 5 | 6 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory system with a plurality of select string lines16 Jun 2026US 12,660,177 B2Kioxia Corporation
- Field effect transistor with top-protected gate electrode and methods for forming the same26 May 2026US 12,641,785 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure4 Nov 2025US 12,464,714 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof7 Oct 2025US 12,439,594 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory27 May 2025US 12,317,488 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device25 Jun 2026US 2026/0181886 A1Renesas Electronics Corporation
- Semiconductor device having non-continuous wall structure surrounding stacked gate structure including conductive layer disposed between segmented portions of the wall structure and manufacturing method thereof27 Nov 2025US 2025/0365949 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof20 Nov 2025US 2025/0359049 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Non-volatile memory cell with single poly floating gate and contact control gate13 Nov 2025US 2025/0351346 A1STMicroelectronics International N. V.
- Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory17 Jul 2025US 2025/0234542 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nonvolatile memory and manufacturing method thereof116US 6,472,684 B1Semiconductor Energy Laboratories Co., Ltd. · 2002
- Floating gate memory with improved dielectric64US 4,613,956 ATexas Instruments Incorporated · 1986
- Method of forming a split gate memory device and apparatus44US 7,795,091 B22010
- Method of making a non-volatile floating gate memory device with peripheral transistor41US 5,472,892 ASamsung Electronics Co., Ltd. · 1995
- Nonvolatile memory and manufacturing method thereof40US 6,509,602 B2Semiconductor Energy Laboratory Co.Ltd. · 2003