Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure

A semiconductor device, comprising:

• a stacked gate structure;
• a plurality of stacks aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction;
• and
• a first conductive layer between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.

A semiconductor device, comprising:

• a stacked gate structure;
• a wall structure aside the stacked gate structure, comprising a plurality of stacks arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction;
• a first conductive layer between segmented portions of the stacks of the wall structure along the second direction;
• and
• a first dielectric layer, wherein the first dielectric layer is continuously disposed on top surfaces of the segmented portions of the stacks and under a bottom surface of the first conductive layer.