Electronic devices including an implant structure, for protection against corrosion, and related systems and methods

An electronic device, comprising:

• a stack comprising tiers of alternating conductive structures and insulative structures overlying a source structure;
• pillars vertically extending through the stack and into the source structure, the pillars comprising a channel material;
• a source contact adjacent to the channel material of the pillars;
• a source implant region laterally adjacent to the source contact and laterally adjacent to lower portions of the pillars within the source structure;
• and
• opposing portions of a source level conductive material between the source contact and the source implant region, upper surfaces of the source level conductive material vertically recessed relative to an upper surface of the source contact.

A method of forming an electronic device, the method comprising:

• forming a source stack comprising one or more conductive materials including a doped semiconductive material;
• forming a source contact sacrificial structure adjacent to the doped semiconductive material;
• forming tiers adjacent to the source contact sacrificial structure, the tiers comprising alternating insulative materials and additional insulative materials;
• forming pillars extending through the tiers and the source contact and into the source stack, the pillars including a channel;
• forming a slit through the tiers to expose the source contact sacrificial structure;
• removing the source contact sacrificial structure to form a source contact opening;
• forming a conductive material in the source contact opening to form a source contact adjacent to the source stack, the source contact extending laterally and substantially surrounding the channel of the pillars;
• forming an implant structure extending through the conductive material of the source contact and into a portion of the doped semiconductive material;
• replacing the additional insulative materials of the tiers with conductive materials to form tiers of alternating conductive materials and insulative materials adjacent to the source contact;
• and
• forming a fill material within the slit to form a slit structure extending through the tiers and the source contact, the implant structure extending within the slit structure and into the source stack, an upper portion of the implant structure above the source stack and wholly contained within the slit structure.

A system, comprising:

• a processor operably coupled to an input device and an output device;
• and
• one or more electronic devices operably coupled to the processor, the one or more electronic devices comprising:
• strings of memory cells extending vertically through a stack comprising a vertically alternating sequence of insulative structures and conductive structures;
• slit structures extending vertically through the stack and separating the stack into blocks, each block comprising some of the strings of memory cells;
• a lateral contact region adjacent to the strings of memory cells;
• source implant structures extending laterally and centrally located within lower portions of the slit structures;
• and
• a dielectric material or a semiconductive material laterally separating the source implant structures from the lateral contact region, the lateral contact region and the source implant structures in direct contact with the dielectric material or the semiconductive material.