Memory device formed on silicon-on-insulator substrate, and method of making same

A method of forming a memory device, comprising:

• providing a SOI substrate that comprises bulk silicon, an insulation layer vertically over the bulk silicon, and a silicon layer vertically over the insulation layer;
• and
• forming a memory cell in a memory cell region of the SOI substrate by:
• forming a source region and a drain region in the bulk silicon, with a channel region of the bulk silicon extending therebetween,
• forming a floating gate comprising a first portion of the silicon layer disposed vertically over and insulated from a first portion of the channel region by the insulation layer, wherein the forming the floating gate comprises epitaxially growing silicon on the first portion of the silicon layer or forming a layer of polysilicon on the first portion of the silicon layer,
• forming a select gate disposed vertically over and insulated from a second portion of the channel region,
• forming a control gate disposed vertically over and insulated from the floating gate, and
• forming an erase gate disposed vertically over and insulated from the source region.