H10B 41/46
With an inter-gate dielectric layer also being used as part of the
Official title: with an inter-gate dielectric layer also being used as part of the peripheral transistor
H10B41/46 (With an inter-gate dielectric layer also being used as part of the) appears on 149 US grants and 137 published applications in this corpus.
Search patents in H10B- Granted patents
- 149
- Published applications
- 137
- Assignees
- 61
- Inventors
- 320
- Latest grant
- 20 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 2 |
| 2002 | 3 | 5 |
| 2003 | 3 | 3 |
| 2004 | 2 | 3 |
| 2005 | 4 | 10 |
| 2006 | 6 | 9 |
| 2007 | 5 | 6 |
| 2008 | 7 | 6 |
| 2009 | 3 | 2 |
| 2010 | 6 | 2 |
| 2011 | 1 | 0 |
| 2012 | 3 | 4 |
| 2013 | 3 | 2 |
| 2014 | 4 | 3 |
| 2015 | 3 | 6 |
| 2016 | 7 | 7 |
| 2017 | 10 | 12 |
| 2018 | 6 | 8 |
| 2019 | 6 | 3 |
| 2020 | 4 | 2 |
| 2021 | 3 | 23 |
| 2022 | 15 | 9 |
| 2023 | 11 | 5 |
| 2024 | 8 | 3 |
| 2025 | 2 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Three-dimensional (3D) semiconductor memory device including a separation structure and electronic system including the same20 Jan 2026US 12,532,465 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory devices13 Jan 2026US 12,526,996 B2Yangtze Memory Technologies Co., Ltd.
- Memory device9 Sep 2025US 12,414,294 B2United Microelectronics Corp.
- Three-dimensional semiconductor memory device and electronic system including the same11 Feb 2025US 12,225,730 B2Samsung Electronics Co., Ltd.
- Three-dimensional semiconductor devices15 Oct 2024US 12,120,881 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory devices2 Apr 2026US 2026/0096099 A1Yangtze Memory Technologies Co., Ltd.
- Memory device11 Dec 2025US 2025/0380410 A1United Microelectronics Corp.
- Memory device29 Feb 2024US 2024/0074174 A1United Microelectronics Corp.
- Three-dimensional memory device and manufacturing method thereof11 Jan 2024US 2024/0015962 A1SK hynix Inc.
- Three-dimensional semiconductor memory device and method of fabricating the same11 Jan 2024US 2024/0015970 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Fabrication of interpoly dielctric for EPROM-related technologies122US 5,104,819 AIntel Corporation · 1992
- Non-volatile memory cell having dual gate electrodes114US 5,751,037 ASony Corporation · 1998
- Ferroelectric memory cell for an integrated circuit91US 10,600,808 B2NaMLab gGmbH · 2020
- Method of manufacturing a nonvolatile memory82US 6,251,729 B1U. S. Philips Corporation · 2001
- MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide69US 4,822,750 ASeeq Technology, Inc. · 1989