Ferroelectric memory cell for an integrated circuit

An integrated circuit comprising a ferroelectric memory cell, the ferroelectric memory cell comprising:

• an oxide storage layer comprising a ferroelectric material that is at least partially in a ferroelectric state, the ferroelectric material comprising one or more components selected from the group consisting of (Hf, O), (Zr, O), and (Hf, Zr, O), wherein the one or more components are present in an amount higher per unit cell than any other components or additives present in the oxide storage layer;
• an electrode layer;
• and
• an oxygen vacancy density reduction layer disposed between the oxide storage layer and the electrode layer, wherein the oxygen vacancy density reduction layer comprises at least one element with a higher valence value than Hf(4+) or Zr(4+).