Embedded memory device and method of fabricating the same

A semiconductor device comprising:

• a substrate;
• and
• a memory device on the substrate, the memory device including:
• a first gate structure on the substrate;
• a second gate structure on the substrate adjacent to the first gate in a first direction;
• an insulating structure on the substrate between the first gate and the second gate relative to the first direction, an upper surface of the insulating structure being higher, relative to the substrate, than an upper surface of the first gate and higher than an upper surface of the second gate;
• and
• a cap structure on the upper surface of the first gate and the upper surface of the second gate, wherein:
• an upper surface of the cap structure is substantially level with the upper surface of the insulating structure, and
• the upper surface of the cap structure is more hydrophilic than the upper surface of the first gate structure and the upper surface of the second gate structure.

A semiconductor device comprising

• a substrate;
• a memory structure on the substrate, including:
• a first gate structure;
• a second gate structure adjacent to the first gate in a first direction;
• an insulating structure between the first gate structure and the second gate structure relative to the first direction;
• and
• a cap structure on the first gate structure and the second gate structure;
• and
• a logic structure on the substrate, including:
• a third gate structure, wherein:
• the third gate structure has an upper surface that is substantially level with an upper surface of the cap structure, and
• the upper surface of the cap structure is electrically insulated from the first gate structure and the second gate structure.