H10B 41/48
With a tunnel dielectric layer also being used as part of the
Official title: with a tunnel dielectric layer also being used as part of the peripheral transistor
H10B41/48 (With a tunnel dielectric layer also being used as part of the) appears on 367 US grants and 316 published applications in this corpus.
Search patents in H10B- Granted patents
- 367
- Published applications
- 316
- Assignees
- 93
- Inventors
- 635
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 8 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 11 | 0 |
| 1999 | 12 | 0 |
| 2000 | 12 | 0 |
| 2001 | 16 | 3 |
| 2002 | 14 | 21 |
| 2003 | 18 | 19 |
| 2004 | 18 | 27 |
| 2005 | 18 | 19 |
| 2006 | 13 | 19 |
| 2007 | 16 | 35 |
| 2008 | 21 | 25 |
| 2009 | 19 | 15 |
| 2010 | 17 | 10 |
| 2011 | 11 | 7 |
| 2012 | 15 | 11 |
| 2013 | 6 | 7 |
| 2014 | 5 | 10 |
| 2015 | 8 | 12 |
| 2016 | 15 | 13 |
| 2017 | 10 | 9 |
| 2018 | 7 | 8 |
| 2019 | 8 | 5 |
| 2020 | 9 | 7 |
| 2021 | 4 | 13 |
| 2022 | 9 | 4 |
| 2023 | 5 | 6 |
| 2024 | 5 | 2 |
| 2025 | 4 | 6 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Electronic devices including an implant structure, for protection against corrosion, and related systems and methods21 Apr 2026US 12,610,546 B2Micron Technology, Inc.
- Method of fabricating a semiconductor device using laser annealing2 Dec 2025US 12,490,432 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device and manufacturing method thereof7 Oct 2025US 12,439,594 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devices2 Sep 2025US 12,406,886 B2Micron Technology, Inc.
- Non-volatile memory device11 Feb 2025US 12,225,723 B2Iotmemory Technology Inc.
- Electronic devices including a source implant region and electronic devices including implant structures27 Aug 2026US 2026/0255602 A1Micron Technology, Inc.
- Method of manufacturing semiconductor device25 Jun 2026US 2026/0181886 A1Renesas Electronics Corporation
- Flash memory and manufacturing method thereof14 May 2026US 2026/0136551 A1Winbond Electronics Corp.
- Microelectronic devices including slot structures11 Dec 2025US 2025/0379103 A1Micron Technology, Inc.
- Semiconductor device and manufacturing method thereof20 Nov 2025US 2025/0359049 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Technique of forming over an irregular surface a polysilicon layer with a smooth surface285US 5,595,924 ASanDisk Corporation · 1997
- Process for making integrated circuits having titanium nitride triple interconnect196US 4,804,636 ATexas Instruments Incorporated · 1989
- Process for patterning local interconnects183US 4,657,628 ATexas Instruments Incorporated · 1987
- SRAM with local interconnect173US 4,975,756 ATexas Instruments Incorporated · 1990