Electronic devices including a source implant region and electronic devices including implant structures
AssigneeMicron Technology, Inc.
InventorsJohn D. Hopkins, Jordan D. Greenlee
Life of this patent
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Abstract
Electronic devices comprising a source stack comprising one or more conductive materials, a source contact adjacent to the source stack, tiers of alternating conductive materials and insulative materials adjacent to the source contact, pillars extending through the tiers and the source contact and into the source stack, a slit structure extending through the tiers and the source contact, and an implant structure extending within the slit structure and into the source stack. Related methods and systems are also disclosed.
Claims20
An electronic device, comprising:
- a stack comprising tiers of alternating conductive structures and insulative structures vertically adjacent to a source structure;
- pillars vertically extending through the stack and into the source structure;
- a source contact between the stack and the source structure;
- and
- a source implant region between portions of the source contact and extending into the source structure.
An electronic device, comprising:
- a stack comprising tiers of alternating conductive structures and insulative structures vertically adjacent to a source structure;
- pillars vertically extending through the stack and into the source structure;
- a source contact between the stack and the source structure;
- a slit structure separating the source contact into discrete portions;
- and
- a source implant region within the slit structure and the source structure.
An electronic device comprising:
- vertical strings of memory cells extending through a tier stack comprising word lines, the word lines coupled to the memory cells;
- bit lines coupled to individual groups of the vertical strings of memory cells;
- first select gates coupled to an end of the vertical strings of memory cells;
- second select gates coupled to an opposite end of the vertical strings of memory cells;
- a source contact adjacent to the vertical strings of memory cells;
- a source tier adjacent to the source contact;
- an implant structure extending vertically between the source contact and the source tier;
- and
- a slit structure extending vertically through the tier stack and into the source contact.
Dependencies are inferred from the claim text.