H10B 41/44
With a control gate layer also being used as part of the
Official title: with a control gate layer also being used as part of the peripheral transistor
H10B41/44 (With a control gate layer also being used as part of the) appears on 277 US grants and 238 published applications in this corpus.
Search patents in H10B- Granted patents
- 277
- Published applications
- 238
- Assignees
- 90
- Inventors
- 459
- Latest grant
- 28 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 10 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 9 | 0 |
| 2001 | 11 | 3 |
| 2002 | 10 | 12 |
| 2003 | 11 | 8 |
| 2004 | 8 | 12 |
| 2005 | 11 | 15 |
| 2006 | 8 | 12 |
| 2007 | 9 | 15 |
| 2008 | 9 | 14 |
| 2009 | 9 | 7 |
| 2010 | 11 | 8 |
| 2011 | 7 | 8 |
| 2012 | 6 | 7 |
| 2013 | 8 | 5 |
| 2014 | 5 | 6 |
| 2015 | 9 | 10 |
| 2016 | 9 | 13 |
| 2017 | 16 | 18 |
| 2018 | 11 | 11 |
| 2019 | 9 | 10 |
| 2020 | 20 | 13 |
| 2021 | 11 | 13 |
| 2022 | 8 | 8 |
| 2023 | 8 | 3 |
| 2024 | 3 | 1 |
| 2025 | 4 | 4 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device and methods of erasure operation using different float times for string selection transistors28 Oct 2025US 12,456,522 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device and manufacturing method thereof7 Oct 2025US 12,439,594 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory and manufacturing method thereof13 May 2025US 12,302,558 B2Yangtze Memory Technologies Co., Ltd.
- Non-volatile memory device11 Feb 2025US 12,225,723 B2Iotmemory Technology Inc.
- Semiconductor device and manufacturing method thereof6 Aug 2024US 12,058,856 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory and manufacturing method thereof14 May 2026US 2026/0136551 A1Winbond Electronics Corp.
- Semiconductor device and manufacturing method thereof20 Nov 2025US 2025/0359049 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory and manufacturing method thereof31 Jul 2025US 2025/0248032 A1Yangtze Memory Technologies Co., Ltd.
- Non-volatile memory device10 Apr 2025US 2025/0120077 A1Iotmemory Technology Inc.
Most cited
By later US patents
- Method for forming a semiconductor device having a floating gate168US 5,702,964 ALG Semicon Co., Ltd. · 1997
- Method of making embedded flash memory with salicide and sac structure94US 6,074,915 ATaiwan Semiconductor Manufacturing Company.Ltd · 2000
- PMOS memory cell with hot electron injection programming and tunnelling erasing84US 5,687,118 AProgrammable Microelectronics Corporation · 1997
- Integrated memory cell and method of fabrication68US 6,518,618 B1Intel Corporation · 2003
- Nonvolatile memory device and manufacturing method thereof64US 5,789,293 ASamsung Electronics Co., Ltd. · 1998