Integrated memory cell and method of fabrication
AssigneeIntel Corporation
InventorsAlbert Fazio, Krishna Parat, Glen Wada, Neal Mielke, Rex Stone
Life of this patent
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Abstract
A nonvolatile memory cell comprising a pair of spaced apart shallow trench isolation regions formed in a substrate and defining a substrate active region. A tunnel dielectric is formed on the substrate active region. A floating gate is formed on the tunnel dielectric and is self aligned between the spaced apart shallow trench isolation regions. A dielectric layer is formed on the floating gate and a control gate formed on the dielectric layer. A source region and a drain region are formed in the substrate active region on opposite sides of the floating gate.
Claims9
A nonvolatile memory cell comprising:
- a pair of spaced apart shallow trench isolation regions formed in a substrate and defining a substrate active region there between;
- a tunnel dielectric formed on said substrate active region;
- a floating gate formed on said tunnel dielectric and between said pair of spaced apart shallow trench isolation regions;
- a dielectric layer on said floating gate;
- a control gate formed on said dielectric;
- and
- a source region and a drain region formed in said substrate active region on opposite sides of said floating-gate, wherein said source region is coupled to a common source rail formed through said pair of spaced apart shallow trench isolation regions.
A nonvolatile memory cell comprising:
- a pair of spaced apart isolation regions formed in a substrate and defining a substrate active region there between;
- a tunnel dielectric formed on said substrate active region;
- a floating gate formed on said tunnel dielectric, said floating gate having a work function of greater than 4.1 electron volts;
- a dielectric layer on said floating gate;
- a control gate on said dielectric layer;
- a source region and a drain region formed in said substrate and on opposite sides of said floating gate;
- and
- a contact formed on said drain region and on one of said isolation regions.
Dependencies are inferred from the claim text.