Three-dimensional memory and manufacturing method thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhong Zhang, Yuhui Han, Cuicui Kong, Kun Zhang
Life of this patent
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Abstract
A three-dimensional memory includes a stack structure, a dummy structure and a gate line slit. The stack structure includes gate line layers and isolation layers stacked alternatively in the vertical direction. The dummy structure includes a first dummy section and a second dummy section. The gate line slit has one end extending into a gap formed by at least one of the first dummy section or the second dummy section. At least one of the first dummy section and the second dummy section partially overlaps a projection of the gate line slit onto the horizontal plane to realize connection between the dummy structure and the gate line slit.
Claims20
A three-dimensional memory, comprising:
- a stack structure comprising gate line layers and dielectric layers stacked alternatively in a vertical direction;
- a dummy structure penetrating through the stack structure in the vertical direction and comprising a first dummy section and a second dummy section;
- and
- a gate line slit penetrating through the stack structure in the vertical direction, wherein the gate line slit has one end extending into at least one gap formed by at least one of the first dummy section or the second dummy section, and the one end is in contact with a portion of the stack structure located in the at least one gap.
A method of manufacturing a three-dimensional memory, comprising:
- forming a stack structure on a substrate, the stack structure comprising gate line sacrificial layers and dielectric layers stacked alternatively in a vertical direction;
- forming a dummy structure penetrating through the stack structure in the vertical direction and comprising a first dummy section and a second dummy section;
- and
- forming a gate line slit penetrating through the stack structure in the vertical direction, wherein the gate line slit has one end extending into a gap formed by the first dummy section and/or the second dummy section, and the one end is in contact with a portion of stack structure located in the gap.
Dependencies are inferred from the claim text.