Nonvolatile memory device and manufacturing method thereof

A manufacturing method of a nonvolatile memory device comprising the steps of:

• forming a first conductive layer on a semiconductor substrate;
• forming a floating gate pattern in a memory cell region and a resistance pattern in a boundary region between said memory cell region and a peripheral circuit region by patterning said first conductive layer;
• forming an insulating film on said floating gate and said resistance pattern;
• forming a gate insulating film on said peripheral circuit region;
• forming a second conductive layer on the insulating film and the gate insulating film;
• forming a gate electrode of a nonvolatile memory device in said memory cell region and a resistance device in said boundary region by etching said second conductive layer, insulating film and first conductive layer;
• and
• forming a capping layer exposing a surface of said resistance device, and forming a gate electrode of said peripheral circuit region wherein said forming of said capping layer and said gate electrode of said peripheral circuit region is provided by patterning said second conductive layer formed on said resistance device and said peripheral circuit region.