Semiconductor device including bit line pad, method for manufacturing the same and electronic system including the same

A semiconductor device, comprising:

• a gate stack structure including alternately stacked insulating patterns and conductive patterns;
• a memory channel structure extending through the gate stack structure;
• and
• a bit line pad on the memory channel structure, wherein:
• the memory channel structure includes a variable resistance layer, a channel layer surrounding the variable resistance layer, and a channel insulating layer surrounding the channel layer,
• the insulating patterns include an uppermost insulating pattern at an uppermost portion of the gate stack structure, and
• the channel insulating layer has:
• a first surface coplanar with a top surface of the uppermost insulating pattern, and
• a second surface coplanar with a side wall of the bit line pad, the second surface facing away from the channel layer.

An electronic system, comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate,
• wherein:
• the semiconductor device includes:
• a gate stack structure including alternately stacked insulating patterns and conductive patterns;
• a memory channel structure extending through the gate stack structure;
• and
• a bit line pad on the memory channel structure,
• the memory channel structure includes a variable resistance layer, a channel layer surrounding the variable resistance layer, and a channel insulating layer surrounding the channel layer,
• the insulating patterns include an uppermost insulating pattern at an uppermost portion of the gate stack structure,
• a level of a top surface of the variable resistance layer, a level of a top surface of the channel layer, and a level of a top surface of the channel insulating layer are each higher than a level of a top surface of the uppermost insulating pattern, and the top surfaces of the variable resistance layer, the channel layer, and the channel insulating layer are coplanar.