Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorChih-Ching Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a first film stack, a second film stack, a first gate spacer, a buffer layer, and a second gate spacer. The first and second film stacks are located on the substrate, and are respectively located in an array area and a periphery area. The first gate spacer includes a first portion on a sidewall of the first film stack and a second portion on a sidewall of the second film stack. The buffer layer includes a first portion on a sidewall of the first portion of the first gate spacer and a second portion on a sidewall of the second portion of the first gate spacer. The second gate spacer includes a first portion on a sidewall of the first portion of the buffer layer and a second portion on a sidewall the second portion of the buffer layer.
Claims12
A semiconductor device, comprising:
- a substrate;
- a first film stack located on the substrate and located in an array area of the semiconductor device;
- a second film stack located on the substrate and located in a periphery area of the semiconductor device;
- a first gate spacer comprising a first portion on a sidewall of the first film stack and a second portion on a sidewall of the second film stack;
- a buffer layer comprising a first portion on a sidewall of the first portion of the first gate spacer and a second portion on a sidewall of the second portion of the first gate spacer;
- and
- a second gate spacer comprising a first portion on a sidewall of the first portion of the buffer layer and a second portion on a sidewall the second portion of the buffer layer, wherein the first portion of the buffer layer is located between the first portion of the first gate spacer and the first portion of the second gate spacer, and the second portion of the buffer layer is located between the second portion of the first gate spacer and the second portion of the second gate spacer.
Dependencies are inferred from the claim text.