H10B 41/41
Of a memory region comprising a cell select transistor
Official title: of a memory region comprising a cell select transistor, e.g. NAND
H10B41/41 (Of a memory region comprising a cell select transistor) appears on 1,647 US grants and 2,088 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,647
- Published applications
- 2,088
- Assignees
- 149
- Inventors
- 2,266
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 16 | 5 |
| 2002 | 15 | 24 |
| 2003 | 17 | 15 |
| 2004 | 16 | 20 |
| 2005 | 13 | 29 |
| 2006 | 28 | 48 |
| 2007 | 29 | 55 |
| 2008 | 34 | 65 |
| 2009 | 39 | 52 |
| 2010 | 47 | 44 |
| 2011 | 44 | 59 |
| 2012 | 60 | 65 |
| 2013 | 54 | 44 |
| 2014 | 47 | 61 |
| 2015 | 65 | 70 |
| 2016 | 62 | 70 |
| 2017 | 71 | 68 |
| 2018 | 63 | 61 |
| 2019 | 77 | 99 |
| 2020 | 113 | 131 |
| 2021 | 110 | 182 |
| 2022 | 133 | 235 |
| 2023 | 138 | 157 |
| 2024 | 151 | 138 |
| 2025 | 117 | 160 |
| 2026 | 72 | 131 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- All graphene flash memory device281US 8,772,853 B2The Regents of the University of California · 2014
- Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof222US 10,283,493 B1SanDisk Technologies LLC · 2019
- Memory system, semiconductor memory device and method of driving same217US 7,558,141 B2Kabushiki Kaisha Toshiba · 2009
- Three dimensional stacked nonvolatile semiconductor memory205US 8,068,364 B2Kabushiki Kaisha Toshiba · 2011
- Nonvolatile semiconductor memory device and method for manufacturing same196US 8,178,919 B2Kabushiki Kaisha Toshiba · 2012