All graphene flash memory device
AssigneeThe Regents of the University of California
InventorsAugustin J. Hong, Ji-Young Kim, Kang-Lung Wang
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Abstract
A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.
Claims21
A Graphene Flash Memory (GFM) device comprising:
- a graphene channel layer;
- a polymer layer over the graphene channel layer;
- a tunnel oxide layer on a surface of the polymer layer opposite the graphene channel layer;
- and
- a plurality of memory cells on a surface of the tunnel oxide layer opposite the polymer layer, each memory cell of the plurality of memory cells comprising the graphene channel layer, the polymer layer, the tunnel oxide layer, a graphene storage layer, and a graphene electrode.
A memory cell comprising:
- a graphene channel layer;
- a polymer layer on a surface of the graphene channel layer;
- a tunnel oxide layer on a surface of the polymer layer opposite the graphene channel layer;
- a graphene storage layer on a surface of the tunnel oxide layer opposite the polymer layer;
- a control oxide layer on a surface of the graphene storage layer opposite the tunnel oxide layer;
- and
- a graphene electrode on a surface of the control oxide layer opposite the graphene storage layer.
Dependencies are inferred from the claim text.