Semiconductor device with through electrode through mold structure

A semiconductor device comprising:

• a cell structure comprising:
• a first surface,
• a second surface opposite to the first surface, and
• a main block and a dummy block each comprising a cell region and a connection region,
• wherein the dummy block comprises:
• a mold structure comprising at least one gate electrode and at least one mold insulating layer in a first direction in the cell region and the connection region;
• a common source layer on the mold structure;
• a first insulating layer on the mold structure and the common source layer;
• a channel structure connected to the common source layer by passing through the mold structure in the first direction in the cell region;
• a cell plug in contact with the at least one gate electrode by passing through the mold structure in the first direction in the connection region;
• a contact structure passing through the first insulating layer;
• a through electrode comprising a first through electrode and a second through electrode each connected to the contact structure by passing through the mold structure in the first direction in the cell region;
• and
• an electrode isolation insulating layer between the first through electrode and the second through electrode and extending in a second direction different from the first direction through the mold structure.

A semiconductor device comprising:

• a peripheral circuit structure;
• and
• a cell structure comprising:
• a main block and a dummy block spaced apart from the main block in a first direction,
• a cell region, and
• a connection region,
• wherein the dummy block comprises:
• a mold structure comprising at least one gate electrode and at least one mold insulating in a second direction in the cell region and the connection region;
• a common source layer on the mold structure;
• a first insulating layer on the mold structure and the common source layer;
• a channel structure connected to the common source layer by passing through the mold structure in the second direction in the cell region;
• a cell plug in contact with at least one gate electrode by passing through the mold structure in the second direction in the connection region;
• a contact structure including a first contact passing through the first insulating layer in the cell region and a second contact connected to the cell plug by passing through the first insulating layer in the connection region;
• and
• a through electrode connecting the first contact to the peripheral circuit structure by passing through the mold structure in the second direction in the cell region.