Semiconductor structure

A semiconductor structure, comprising:

• a substrate comprising an active region and a first source/drain region, a second source/drain region, and a plurality of lightly doped regions that are disposed in the active region;
• a gate layer disposed over the active region, wherein the first source/drain region and the second source/drain region are configured at opposite sides of the gate layer in a first direction, and the plurality of lightly doped regions are respectively configured between the gate layer and the first source/drain region and between the gate layer and the second source/drain region;
• and
• a plurality of dummy gate layers respectively disposed over the plurality of lightly doped regions of the substrate and electrically connected to the gate layer.

A semiconductor structure, comprising:

• a substrate comprising an active region and a source region, a drain region, and at least one lightly doped region that are disposed in the active region, wherein the lightly doped region is disposed between the source region and the drain region in a first direction;
• a gate structure disposed on the active region and comprising a gate layer and a gate insulation layer between the gate layer and the substrate, wherein the source region and the drain region are configured at opposite sides of the gate layer in the first direction, and the lightly doped region is configured between the gate layer and the drain region;
• and
• a dummy gate structure disposed on the lightly doped region and comprising a dummy gate layer and a dummy gate insulation layer between the dummy gate layer and the substrate, wherein the dummy gate layer is electrically connected to the gate layer.