Semiconductor devices having through-insulating structures and data storage systems including the same

A semiconductor device, comprising:

• a substrate including a first region, a second region and a third region between the first region and the second region;
• a stack structure including gate electrodes including lower gate electrodes, memory gate electrodes and upper gate electrodes sequentially stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, and interlayer insulating layers disposed alternately with the gate electrodes, in the first region, the second region and the third region;
• a channel structure penetrating the stack structure and extending in the first direction in the first region;
• support structures penetrating the stack structure, extending in the first direction in the third region, and spaced apart from each other by a first distance;
• first contact structures extending in the first direction by different lengths by penetrating an uppermost interlayer insulating layer among the interlayer insulating layers, or penetrating at least a portion of the upper gate electrodes, the first contact structures being electrically connected to the upper gate electrodes, respectively, and having an upper surface having a first width, in the third region;
• and
• second contact structures extending from the uppermost interlayer insulating layer in the first direction by different lengths by penetrating the upper gate electrodes, and at least a portion of the gate electrodes of the memory gate electrodes and the lower gate electrodes, the second contact structures being electrically connected to the lower gate electrodes and the memory gate electrodes, respectively, in the second region, and
• wherein the first width of the first contact structures is greater than the first distance.

A data storage system, comprising:

• a semiconductor storage device including a first semiconductor structure including circuit devices, a second semiconductor structure disposed on one surface of the first semiconductor structure, and an input/output pad electrically connected to the circuit devices;
• and
• a controller electrically connected to the semiconductor storage device through the input/output pad and controlling the semiconductor storage device,
• wherein the second semiconductor structure includes:
• a substrate including a first region, a second region and a third region between the first region and the second region;
• a stack structure including gate electrodes including lower gate electrodes, memory gate electrodes and upper gate electrodes sequentially stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, and interlayer insulating layers disposed alternately with the gate electrodes, in the first region, the second region and the third region;
• a channel structure penetrating the stack structure and extending in the first direction in the first region;
• support structures penetrating the stack structure, extending in the first direction, and spaced apart from each other by a first distance, in the third region;
• first contact structures extending in the first direction by different lengths by penetrating an uppermost interlayer insulating layer among the interlayer insulating layers, or penetrating at least a portion of the upper gate electrodes, the first contact structures being electrically connected to the upper gate electrodes, respectively, and having an upper surface having a first width, in the third region;
• and
• second contact structures extending from the uppermost interlayer insulating layer in the first direction by different lengths by penetrating the upper gate electrodes, and at least a portion of the gate electrodes of the memory gate electrodes and the lower gate electrodes, the second contact structures being electrically connected to the lower gate electrodes and the memory gate electrodes, respectively, in the second region,
• wherein the first width of the first contact structures is greater than the first distance.