Integrated circuit device and electronic system including the same

An integrated circuit device comprising:

• a peripheral circuit structure;
• and
• a cell array structure including a cell stack structure overlapping the peripheral circuit structure in a vertical direction, the cell stack structure including a plurality of gate electrodes and a plurality of insulating layers alternately stacked on each other and having a step shape,
• wherein the peripheral circuit structure includes:
• a substrate including an active region in which a central active region, first, second, third, and fourth base active regions, and first, second, third, and fourth extended active regions are integrally formed, the active region being defined by a device isolation film, the first, second, third, and fourth base active regions being spaced apart from each other in different diagonal directions with respect to the central active region in a plan view, and the first, second, third, and fourth extended active regions being spaced apart from each other and connecting the central active region to the first, second, third, and fourth base active regions;
• and
• first, second, third, and fourth gate structures that respectively cross the first, second, third, and fourth base active regions, that extend in a first horizontal direction, and that are spaced apart from each other on the substrate,
• wherein the central active region, the first, second, third, and fourth extended active regions, the first, second, third, and fourth base active regions, and the first, second, third, and fourth gate structures configure first, second, third, and fourth pass transistors electrically connected to the plurality of gate electrodes.

An electronic system comprising:

• a main substrate;
• an integrated circuit device on the main substrate, the integrated circuit device including a peripheral circuit structure and a cell array structure, wherein the cell array structure includes a cell stack structure that overlaps the peripheral circuit structure in a vertical direction, that includes a plurality of gate electrodes and a plurality of insulating layers alternately stacked on each other, and that has a step shape;
• and
• a controller electrically connected to the integrated circuit device on the main substrate,
• wherein the peripheral circuit structure includes:
• a periphery substrate including an active region in which a central active region, first, second, third, and fourth base active regions, and first, second, third, and fourth extended active regions are integrally formed, a drain region being located in the central active region and first, second, third, and fourth source regions being respectively located in the first, second, third, and fourth base active regions, the active region being defined by a device isolation film, the first, second, third, and fourth base active regions being arranged and spaced apart from each other in different diagonal directions with respect to the central active region in a plan view, and the first, second, third, and fourth extended active regions connecting the central active region to the first, second, third, and fourth base active regions and being spaced apart from each other;
• and
• first, second, third, and fourth gate structures that respectively cross the first, second, third, and fourth base active regions, extend in a first horizontal direction, and are spaced apart from each other on the periphery substrate,
• wherein the central active region, the first, second, third, and fourth extended active regions, the first, second, third, and fourth base active regions, and the first, second, third, and fourth gate structures configure first, second, third, and fourth pass transistors electrically connected to the plurality of gate electrodes.