H10B 41/60
The control gate being a doped region
Official title: the control gate being a doped region, e.g. single-poly memory cell
H10B41/60 (The control gate being a doped region) appears on 616 US grants and 619 published applications in this corpus.
Search patents in H10B- Granted patents
- 616
- Published applications
- 619
- Assignees
- 177
- Inventors
- 779
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 6 | 0 |
| 2000 | 6 | 0 |
| 2001 | 15 | 4 |
| 2002 | 7 | 9 |
| 2003 | 16 | 9 |
| 2004 | 19 | 24 |
| 2005 | 21 | 25 |
| 2006 | 25 | 38 |
| 2007 | 15 | 42 |
| 2008 | 30 | 38 |
| 2009 | 35 | 35 |
| 2010 | 39 | 25 |
| 2011 | 27 | 22 |
| 2012 | 26 | 17 |
| 2013 | 23 | 34 |
| 2014 | 25 | 23 |
| 2015 | 29 | 42 |
| 2016 | 36 | 24 |
| 2017 | 33 | 26 |
| 2018 | 28 | 22 |
| 2019 | 27 | 23 |
| 2020 | 30 | 38 |
| 2021 | 20 | 20 |
| 2022 | 22 | 21 |
| 2023 | 18 | 12 |
| 2024 | 9 | 13 |
| 2025 | 11 | 19 |
| 2026 | 5 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Asymmetric single-channel floating gate memristor23 Jun 2026US 12,666,612 B2Tower Semiconductor Ltd.
- Power supplying circuit and associated switch controller for non-volatile memory2 Jun 2026US 12,648,136 B2eMemory Technology Inc.
- Field effect transistor with top-protected gate electrode and methods for forming the same26 May 2026US 12,641,785 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method for controlling verification voltage of memory device26 May 2026US 12,641,786 B2eMemory Technology Inc.
- Memory cell13 Jan 2026US 12,526,992 B2STMicroelectronics International N. V.
- Field effect transistor with top-protected gate electrode and methods for forming the same10 Sep 2026US 2026/0271286 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Non-Volatile Memory Cell and Memory6 Aug 2026US 2026/0231410 A1Chengdu Analog Circuit Technology Inc.
- Memory cell25 Jun 2026US 2026/0181963 A1Floadia Corporation
- Memory read out circuit18 Jun 2026US 2026/0171127 A1eMemory Technology Inc.
- Sense amplifier reducing capacitive coupling effect and a sense circuit and a memory device comprising the same18 Jun 2026US 2026/0171164 A1eMemory Technology Inc.
Most cited
By later US patents
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Floating gate inverter type memory cell and array174US 8,378,407 B2Tower Semiconductor Ltd. · 2013
- Dense arrays and charge storage devices166US 7,129,538 B2SanDisk 3D LLC · 2006
- Semiconductor integrated circuit and nonvolatile memory element156US 6,771,538 B2Renesas Technology Corp. · 2004